HOME > Profile > YAMAGUCHI, Takahide
- Address
- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
External affiliations
Research
- Keywords
Semiconductor devices, Diamond, Quantum transport, Superconductivity
PublicationsNIMS affiliated publications since 2004.
Research papers
- Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures. Nature Electronics. 5 [1] (2022) 37-44 10.1038/s41928-021-00689-4
- Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Shiori Sugiura, Taichi Terashima, Shinya Uji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. Quantum oscillations in diamond field-effect transistors with a h -BN gate dielectric. Physical Review Materials. 3 [12] (2019) 121601 10.1103/physrevmaterials.3.121601
- Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric. APL Materials. 6 [11] (2018) 111105 10.1063/1.5055812
Proceedings
- UEDA, Shinya, OKUTSU, Takashi, KUBO, Yuimaru, ISHII, Satoshi, TSUDA, Shunsuke, YAMAGUCHI, Takahide, TAKANO, Yoshihiko. Measurements of the switching current distribution in REBa2Cu3Oy (RE = Eu, Er) intrinsic Josephson junctions. Journal of Physics:Conference Series. (2008) 012043-1-012043-6
Presentations
- 山口 尚秀. 六方晶窒化ホウ素のダイヤモンド電界効果トランジスタへの応用. 2022年 第83回応用物理学会秋季学術講演会. 2022
- YAMAGUCHI, Takahide. High-Mobility P-Channel Wide Bandgap Transistors Based on Hydrogen-Terminated Diamond and Hexagonal Boron Nitride. 2022 MRS Spring Meeting & Exhibit https://www.mrs.org/meetings-events/spring-meetings-exhibits/2022-mrs-spring-meeting. 2022
- 山口 尚秀, 笹間 陽介, 蔭浦 泰資, 井村 将隆, 渡邊 賢司, 谷口 尚, 内橋 隆. Modeling of Electrical Characteristics in Hydrogen-Terminated Diamond Field-Effect Transistors. 14th International Conference on New Diamond and Nano Carbons 2020/2021. 2021
Misc
- 山口 尚秀. ダイヤモンド高移動度トランジスタ. 金属. (2022) 44-51
- 笹間 陽介, 山口 尚秀. h-BNゲート絶縁体を用いたノーマリーオフ型高移動度ダイヤモンド電界効果トランジスタ. New diamond. (2022) 20-25
- 笹間 陽介, 小松 克伊, 森山 悟士, 井村 将隆, 寺地 徳之, 渡邊 賢司, 谷口 尚, 内橋 隆, 山口 尚秀. hBNヘテロ界面を用いた高移動度ダイヤモンド電界効果トランジスタ. NEW DIAMOND. (2019) 9-15
Patents
- No. 6840327 ダイヤモンド発光整流素子およびその製造方法 (2021)
- No. 5496585 ジョセフソン素子 (2014)
- No. 5804598 超電導フラーレン材料及びその製造方法 (2015)
- No: 2011054893 ジョセフソン素子 (2011)
- No: 2013129561 超伝導フラーレンナノ材料及びその製造方法 (2013)
- No: 2017021967 フラーレン超伝導線材およびその製造方法 (2017)