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Doping of Ga2O3 bulk crystals and NWs by ion implantation

K. Lorenz, M. Peres, M. Felizardo, J. G. Correia, L. C. Alves, E. Alves, I. López, E. Nogales, B. Méndez, J. Piqueras, M. B. Barbosa, J. P. Araújo, J. N. Gonçalves, J. Rodrigues, L. Rino, T. Monteiro, E. G. Villora, K. Shimamura.
Proc. of SPIE Oxide-based Materials and Devices V . 2014.
https://doi.org/10.1117/12.2037627

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