Low-current domain wall motion MRAM with perpendicularly magnetized CoFeB/MgO magnetic tunnel junction and underlying hard magnets

T. Suzuki, H. Tanigawa, Y. Kobayashi, K. Mori, Y. Ito, Y. Ozaki, K. Suemitsu, T. Kitamura, K. Nagahara, E. Kariyada, N. Ohshima, S. Fukami, M. Yamanouchi, S. Ikeda, HAYASHI, Masamitsu, M. Sakao, H. Ohno.

2013 Symposium on VLSI Technology Digest of Technical Papers T138-T139. 2013.

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-02-27 02:27:19 +0900 Updated at: 2017-03-17 04:38:38 +0900