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A first principles study on the C=C defects near SiC/SiO2 interface: Defect passivation by double bond saturation
(SiC/SiO2界面のC=C欠陥に関する第一原理的研究: 二重結合の飽和による欠陥不活性化)
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Created at: 2017-12-12 22:06:49 +0900Updated at: 2018-06-05 14:12:26 +0900