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Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode
((TaC)1-xAlx電極からのAl拡散によるHfO2ゲートスタックにおけるVfbシフトのメカニズム)

ECS TRANSACTIONS 49-59. 2012.

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Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2017-02-27 02:09:00 +0900Updated at: 2017-03-17 04:17:00 +0900

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