HOME > Proceedings > DetailEBIC study of dislocations and stacking faults in 4H-SiC homoepitaxial filmsCHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Takasumi Oyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, FILIPPOFabbri. Publication name Proc. of the 5th International Symposium on Advanced Science and Technology of Silicon Materials 299-303. 2008.NIMS author(s)CHEN, JunFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-27 01:34:33 +0900Updated at: 2017-03-17 03:36:44 +0900