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Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications

著者Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata.
発表誌名ECS Transactions
発表年2021
言語English
DOIhttps://doi.org/10.1149/10202.0147ecst

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