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Degradation of reliability of high-k gate dielectrics caused by point defects and residual stress
(高誘電体ゲート絶縁膜信頼性の点欠陥と残留応力による劣化機構)

Hideo Miura, Ken Suzuki, Toru Ikoma, Seiji Samukawa, YOSHIKAWA, Hideki, UEDA, Shigenori, YAMASHITA, Yoshiyuki, KOBAYASHI, Keisuke.
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International 713-714. 2008.

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    Created at: 2017-02-27 01:33:53 +0900Updated at: 2017-03-17 03:35:56 +0900

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