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Self-Temperature-Compensated GaN MEMS Resonators through Strain Engineering up to 600 K

著者L. Sang, H. Sun, X. Yang, T. Li, B. Shen, M. Liao.
発表誌名Technical Digest - International Electron Devices Meeting
発表年2020
言語English
DOIhttps://doi.org/10.1109/iedm13553.2020.9372065

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