HOME > Proceedings > Detail
Valence band structure of III-V nitride films characterized by hard X-ray photoelectron spectroscopy
(硬x線光電子分光によるIII-V族窒化物薄膜の価電子帯構造評価)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-27 01:45:06 +0900Updated at: 2025-01-13 05:35:55 +0900