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高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成⻑
(Growth of Ge and GeSn by high speed CW laser annealing)


NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2021-02-11 03:00:16 +0900Updated at: 2021-02-11 03:00:16 +0900

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