HOME > Proceedings > DetailModulation of metal-insulator transition temperature in W-doped VO2 thin films: toward Mott devicesHidefumi Takami, Kenichi Kawatani, Teruo Kanki, UEDA, Shigenori, KOBAYASHI, Keisuke, Hidekazu Tanaka. WORLD JOURNAL OF ENGINEERING, SUPPLEMENT 1091-1092. 2012.NIMS author(s)UEDA, ShigenoriFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-27 02:03:50 +0900Updated at: 2017-03-17 04:10:59 +0900