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Controlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing

Author(s)Wipakorn Jevasuwan, Yuji Urabe, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Akihiro Ohtake, Hisashi Yamada, Masahiko Hata, Sunghoon Lee, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi.
Proceedings titleJAPANESE JOURNAL OF APPLIED PHYSICS
Year of publication2012
LanguageEnglish
DOIhttps://doi.org/10.7567/jjap.51.065701

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