Controlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing
| 著者 | Wipakorn Jevasuwan, Yuji Urabe, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Akihiro Ohtake, Hisashi Yamada, Masahiko Hata, Sunghoon Lee, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi. |
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| 発表誌名 | JAPANESE JOURNAL OF APPLIED PHYSICS |
| 発表年 | 2012 |
| 言語 | English |
| DOI | https://doi.org/10.1143/jjap.51.065701 |