HOME > 会議録 > 書誌詳細In-situ TEM observation of silicide formation and dopant segregation in Ni fully silicided gatesTakuji Hosoi, Kentaro Shibahara, HASEGAWA, Akira, FURUYA, Kazuo. Extended Abstracts and Program of ISCSI-V 147-148. 2007.NIMS著者長谷川 明Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-02-27 01:26:00 +0900更新時刻: 2017-03-17 03:26:48 +0900
