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Origin of Fatigue Properties Induced by Oxygen Vacancies Originating from Ferroelectric-HfxZr1−xO2/TiN Interface Reaction During Field Cycling

2023 International Workshop on Dielectric Thin Films For Future Electron Devices. October 23, 2023-October 25, 2023.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2023-10-31 03:14:38 +0900 Updated at: 2023-10-31 03:14:38 +0900

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