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ルチル型TiO2 界面層を用いたHfO2/Ge界面構造制御
(Interface Engineering of HfO2/Ge Gate Stack Structure by Rutile TiO2 Buffer Layer)
第61回応用物理学会春季学術講演会. 2014.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:30:18 +0900Updated at: 2018-06-05 13:31:53 +0900