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GaOxパッシベーション層形成によるSub-1.0 nm EOT HfO2/In0.53Ga0.47As nMISFETの電子移動度向上
2014 Gate stack meeting. 2014.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:01:34 +0900Updated at: 2018-06-05 13:43:06 +0900