HOME > Presentation > DetailGaN-HEMTデバイスの表面状態ダイナミクスの顕微分光分析(Spatio-temporal Dynamics of surface states of GaN-based Transistors)大美賀圭一, 舘野泰範, 河内剛志, 駒谷務, 八重樫誠司, 由井恵一, 中田健, 永村 直佳, 堀場弘司, 尾嶋正治, 末光眞希, 吹留博一. ACSIN14 and ICSPM26. October 21, 2018-October 25, 2018.NIMS author(s)NAGAMURA, NaokaFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2018-09-02 16:19:49 +0900Updated at: 2018-09-02 16:19:49 +0900