HOME > Presentation > DetailMobility in h-BN gated diamond field-effect transistors笹間 陽介, 蔭浦 泰資, 小松 克伊, 森山 悟士, 井上 純一, 井村 将隆, 渡邊 賢司, 谷口 尚, 内橋 隆, 山口 尚秀. MANA INTERNATIONAL SYMPOSIUM 2021 jointly with ICYS. 2021.NIMS author(s)SASAMA, YosukeINOUE, JunichiIMURA, MasatakaWATANABE, KenjiTANIGUCHI, TakashiUCHIHASHI, TakashiYAMAGUCHI, TakahideFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2021-03-17 03:00:22 +0900 Updated at :2021-03-17 03:00:22 +0900