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抵抗変化メモリ(ReRAM)の導電性パス生成機構の検討〜 NiOの様々な面方位の第一原理電子状態解析 〜
(Formative Mechanism of Conducting Path in Resistive Random Access Memory - First-Principles Electronic State Analyses for Various NiO Surfaces -)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:54:49 +0900Updated at: 2018-05-21 21:45:25 +0900