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AuthorMORIYAMA Takumi, YAMASAKI, Takahiro, OHNO, Takahisa, KISHIDA Satoshi, KINOSHITA Kentaro.
Title抵抗変化メモリ(ReRAM)の導電性パス生成機構の検討〜 NiOの様々な面方位の第一原理電子状態解析 〜
(Formative Mechanism of Conducting Path in Resistive Random Access Memory - First-Principles Electronic State Analyses for Various NiO Surfaces -)
Event name応用物理学会春季学術講演会
Year of publication2015
LanguageJapanese
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