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Growth rate dependence and leakage mechanism for vertical-type Schottky barrier diodes fabricated on MOCVD-GaN/GaN substrates
第64回応用物理学会春季学術講演会. March 14, 2017-March 17, 2017.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-12-16 22:06:29 +0900 Updated at: 2018-06-05 14:16:41 +0900