HOME > Presentation > DetailGrowth rate dependence and leakage mechanism for vertical-type Schottky barrier diodes fabricated on MOCVD-GaN/GaN substrates サン リウエン, 任 兵, 廖 梅勇, 角谷 正友, 小出 康夫. 第64回応用物理学会春季学術講演会. 2017.NIMS author(s)SANG, LiwenLIAO, MeiyongSUMIYA, MasatomoKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-12-16 22:06:29 +0900 Updated at :2018-06-05 14:16:41 +0900