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液滴エピタキシー法によるInAlAs/InP(111)A上InAs量子ドット形成 におけるInAs下地層の効果
(Effect of InAs underlying layers on formation of InAs quantum dots on InAlAs/InP(111)A by droplet epitaxy)

第79回応用物理学会秋季学術講演会. 2018.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at :2018-07-01 16:43:13 +0900 Updated at :2018-07-01 16:43:13 +0900

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