HOME > Presentation > Detail
バイアス電圧印加硬X線光電子分光法による界面電子状態の高感度観測
(Detection of low density of electronic states for oxide/Si interfaces by means of hard x-ray phoroelectron spectroscopy)
日本物理学会第64回年次大会. March 27, 2009-March 30, 2009.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 05:51:55 +0900 Updated at: 2017-07-10 20:25:55 +0900