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シリコンカーバイド3C及び４H表面の電子状態と安定性
(Structural stability and electronic states of the 3C- and 4H-SiC surfaces)
Conference on Computational Physics (CCP2012). 2012.
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Created at: 2017-02-14 11:00:20 +0900Updated at: 2017-07-10 21:29:11 +0900