High mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric
29th International Conference on Diamond and Carbon Materials. 2018.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2018-07-20 16:38:59 +0900更新時刻: 2018-07-20 16:38:59 +0900