HOME > Presentation > DetailHigh mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric笹間 陽介, 小松 克伊, 森山 悟士, 井村 将隆, 寺地 徳之, 渡邊 賢司, 谷口 尚, 内橋 隆, 山口 尚秀. 29th International Conference on Diamond and Carbon Materials. 2018.NIMS author(s)SASAMA, YosukeIMURA, MasatakaTERAJI, TokuyukiWATANABE, KenjiTANIGUCHI, TakashiUCHIHASHI, TakashiYAMAGUCHI, TakahideFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2018-07-20 16:38:59 +0900Updated at: 2018-07-20 16:38:59 +0900