SAMURAI - NIMS Researchers Database

HOME > Presentation > Detail


(Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-xCx Interface by the Monte Carlo Method)

伊藤 信, 宇田 毅, 大野 隆央.
The 8th European Conference on Silicon Carbide and Related Mater. 2010.

NIMS author(s)


    Fulltext and dataset(s) on Materials Data Repository (MDR)


      Created at: 2017-01-08 04:19:41 +0900Updated at: 2017-07-10 21:00:59 +0900

      ▲ Go to the top of this page