HOME > Presentation > Detail
ガス加熱トライオードプラズマCVD法による低温成長a-Si:Hの高品質化
(High-quality a-Si:H deposited at low-temperature by thermally energized film-precursors)
第63回応用物理学会春季学術講演会. March 19, 2016-March 22, 2016.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 10:53:32 +0900Updated at: 2017-07-10 22:24:00 +0900