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CドープしたInSiOチャネルによるバイアスストレス特性の改善
(Improvement of bias stress reliability by Carbon-doping in In-Si-O channel TFT)
2015 IWDTF. November 02, 2015-November 04, 2015.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:43:48 +0900Updated at: 2017-07-10 22:13:27 +0900