Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy

IMURA, Masataka, BANALRyan, NAGATA, Takahiro, YAMASHITA, Yoshiyuki, YANGAnli, YOSHIKAWA, Hideki, TSUDA, Shunsuke, KOIDE, Yasuo, 小林啓介, 山口智広, 金子昌充, 荒木努, 名西やすし.

International Workshop on Nitride Semiconductors 2018 (IWN2018). 2018年11月11日-2018年11月16日.

作成時刻: 2019-03-04 09:36:12 +0900 更新時刻: 2019-03-04 09:36:12 +0900