HOME > Presentation > Detail
MBE法による酸化亜鉛基板上への窒化ガリウム薄膜作製
(Growth of GaN films on single crystalline ZnO substrate prepared by molecular beam epitaxy)
2004年度日本セラミックス協会年会. March 22, 2004-March 24, 2004.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:11:16 +0900 Updated at: 2017-07-10 18:56:25 +0900