HOME > Presentation > Detailオペランド光電子分光法による極薄酸化膜/Si界面の界面準位測定(Interface States at Ultrathin-oxide/Si Interface Obtained from Operando Photoelectron Spectroscopy )山下 良之. 第25回日本MRS年次大会. 2015.NIMS author(s)YAMASHITA, YoshiyukiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 05:01:27 +0900Updated at: 2017-07-10 22:18:10 +0900