HOME > Presentation > Detail第一原理計算に基づいた抵抗変化メモリのスイッチング機構(Switching Mechanism of Resistance Random Access Memory Based on the First-Principles Calculations)山崎 隆浩, 大野 隆央. 日本応用物理学会2014年春季年会. 2014.NIMS author(s)OHNO, TakahisaFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-01-08 04:18:43 +0900 Updated at :2017-07-10 22:04:09 +0900