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高濃度水素導入後のn型Siおよびp型Siにおける欠陥形成とキャリア回復過程
(Defect Formation and Recovery of Carrier between n-type and p-type Si Introduced with High Concentration of Hydrogen Atoms)

深田 直樹, 佐藤 俊太郎, 石岡 邦江, 北島 正弘, 村上浩一.
2005年春季第52回応用物理学関係連合講演会. 2005.

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Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at :2017-01-08 05:33:54 +0900 Updated at :2018-05-30 19:28:49 +0900

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