HOME > Presentation > Detail高濃度水素導入後のn型Siおよびp型Siにおける欠陥形成とキャリア回復過程(Defect Formation and Recovery of Carrier between n-type and p-type Si Introduced with High Concentration of Hydrogen Atoms)深田 直樹, 佐藤 俊太郎, 石岡 邦江, 北島 正弘, 村上浩一. 2005年春季第52回応用物理学関係連合講演会. 2005.NIMS author(s)FUKATA, NaokiISHIOKA, KunieFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-01-08 05:33:54 +0900 Updated at :2018-05-30 19:28:49 +0900