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一方向性凝固法を用いた単結晶の種結晶成長中における坩堝近傍での多結晶発生の抑制
(Reduction of multicrystalline silicon near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace)
応用物理学会学術講演会. 2011.
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Created at: 2017-02-14 11:15:50 +0900Updated at: 2017-07-10 21:11:39 +0900