HOME > Presentation > Detail
CaF2挿入によるInGaN紫外線センサーの特性向上
(High-performance metal-semiconductor-metal photodetectors using CaF2 as the insulator)
5th Asia-Pacific Workshop on Widegap Semiconductors. 2011.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:31:20 +0900Updated at: 2018-06-05 12:56:14 +0900