HOME > Presentation > Detail
(Bias dependent electronic states in gate stack structures: HXPES under device operation)
International Conference on Electron Spectroscopy and Structure. 2012.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 05:00:38 +0900Updated at: 2017-07-10 21:27:20 +0900