HOME > Presentation > Detail
Si基板上GaN成長のための反応性スパッタ法を用いた AlNバッファー層作製条件の検討
(Growth condition optimization of AlN buffer layer deposited by reactive sputtering for epitaxial growth of GaN on Si)
第78回応用物理学会秋季学術講演会. 2017.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-12-01 21:57:40 +0900Updated at: 2018-06-05 14:15:48 +0900