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TMA/H2O-ALD法によるRutile-TiO2膜へ酸素欠損の形成による電気特性
(Electrical properties due to oxgen vacancy formation in Rutile-TiO2 films by TMA/H2O-ALD process)

第20回ゲート・スタック研究会. 2015.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at :2017-02-14 11:08:51 +0900 Updated at :2018-06-05 13:40:17 +0900

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