HOME > Presentation > Detail(High-Pressure Raman Study of Al14N and Al15N Epitaxial Thin Films on Sapphire Substrates)遊佐 斉, 大垣 武, 大橋 直樹, 坂口 勲, 羽田 肇. ICC3. November 14, 2010-November 18, 2010.NIMS author(s)YUSA, HitoshiOGAKI, TakeshiOHASHI, NaokiSAKAGUCHI, IsaoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 03:41:38 +0900 Updated at: 2017-07-10 20:54:38 +0900