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Fixed Charge and Trap States in Ni/Al2O3/GaN MIS Schottky Barrier Diodes for Power Device
International Conference on Defects in Semiconductors(ICDS) 2017. 2017.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-09-07 00:22:52 +0900Updated at: 2018-06-05 14:12:31 +0900