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Study of HfSiOx film as gate insulator for GaN power device

生田目 俊秀, 前田 瑛里香, 井上 万里, Ryota Och, 色川 芳宏, Tamotsu Hashizume, Koji Shiozaki, 小出 康夫.
20th International Workshop on Junction Technology 2021. June 10, 2021-June 11, 2021. Invited

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Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2021-08-19 03:00:20 +0900 Updated at: 2024-03-05 12:21:41 +0900

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