HOME > Presentation > DetailMOCVDによるGaN, ZnO薄膜成長における極性構造効果(Growth of wide band gap nitride and oxide films by metalorganic chemical vapor deposition -Effect of the polarity of wurtzite materials and the application of III-V nitride film -)角谷 正友. IUMRS-ICEM 2010. 2010. InvitedNIMS author(s)SUMIYA, MasatomoFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-02-14 11:01:42 +0900 Updated at :2024-03-05 11:43:07 +0900