SAMURAI - NIMS Researchers Database

HOME > Presentation > Detail

MOCVDによるGaN, ZnO薄膜成長における極性構造効果
(Growth of wide band gap nitride and oxide films by metalorganic chemical vapor deposition -Effect of the polarity of wurtzite materials and the application of III-V nitride film -)

IUMRS-ICEM 2010. 2010. Invited

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at :2017-02-14 11:01:42 +0900 Updated at :2024-03-05 11:43:07 +0900

    ▲ Go to the top of this page