HOME > Presentation > DetailScalable growth of high-quality MoS2 and WS2 atomic layers using oxychloride sources in MOCVD reactor佐久間 芳樹, 池田 直樹, 間野 高明, 大竹 晃浩. ICMOVPE-XIX. 2018.NIMS author(s)SAKUMA, YoshikiIKEDA, NaokiMANO, TakaakiOHTAKE, AkihiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2018-06-28 16:44:26 +0900Updated at: 2018-06-28 16:44:26 +0900