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(Vacancy-type defects in InGaN grown by metal organic chemical vapor deposition probed using a monoenergetic positron beam)
55th Electronic Materials. 2013.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:09:44 +0900Updated at: 2017-07-10 21:49:10 +0900