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Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
Conference on Gallium Nitride Materials and Devices XVIII, part of SPIE OPTO.. 2023. Invited
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Created at: 2023-02-07 03:37:10 +0900Updated at: 2024-01-09 03:08:30 +0900