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化合物半導体CuIn1-xGaxSe2を用いた磁気トンネル接合
(Magnetic tunnel junctions with semiconductor CuIn1-xGaxSe2 tunneling barrier)
SPINTECH IX. 2017.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-05-23 22:59:06 +0900Updated at: 2018-06-05 14:08:59 +0900