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In-situ P doped SiGe ストレッサーを有する引張り歪み GeOI nMOSFET の高電流駆動力実証
(High performance strained GeOI nMOSFETs with in-situ doped epitaxial SiGe stressors )
The 61st JSAP Spring Meeting 2014. 2014.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:59:10 +0900Updated at: 2017-07-10 22:05:12 +0900