HOME > Presentation > DetailDevelopment of Atomic Layer Deposition Technique of AlxGa1-xN for Hydrogen-terminated diamond MIS-FETs井村 将隆, 小出 康夫. The 8th Asian Conference on Crystal Growth and Crystal Technology. March 01, 2021-March 03, 2021.NIMS author(s)IMURA, MasatakaFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-09-28 22:44:09 +0900 Updated at: 2021-09-28 22:44:09 +0900